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| to-126c plastic-encapsulate transistors d882 transistor ( npn ) features power dissipation p cm : 1.25w ( ta=25 ) maximum ratings(t a =25 unless otherwise noted) symbol para p h w h u 9 d o x h unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c total device dissipation 1.25 w t j junction temperature 150 t stg junction and storage temperature -55~+150 electrical chara cteristics( ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a ,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 10 ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 100 ma,i c =0 6 v collector cut-off current i cbo v cb =40 v, i e =0 1 a collector cut-off current i ceo v ce =30 v, i b =0 10 a emitter cut-off current i ebo v eb =6v ,i c =0 1 a h fe(1) v ce = 2v, i c = 1a 60 400 dc current gain h fe(2) v ce =2v, i c = 100ma 32 collector-emitter saturation voltage v ce(sat) i c =2a,i b = 0.2a 0.5 v base-emitter saturation voltage v be(sat) i c =2a,i b = 0.2a 1.5 v transition frequency f t v ce =5 v,i c =0.1ma f = 10mhz 50 mhz classification of hfe (1) rank r o y gr range 60-120 100-200 160- 320 200- 400 to- 126 c 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
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